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| DNLS160 LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features * * * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (DPLS160) Surface Mount Package Suited for Automated Assembly Lead Free/RoHS Compliant (Note 1) "Green Device" (Note 2) Qualified to AEC-Q101 Standards for High Reliability NEW PRODUCT SOT-23 Mechanical Data * * * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) C B E Schematic and Pin Configuration Maximum Ratings @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM IB Value 80 60 5 1 2 300 Unit V V V A A mA Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Base Current (DC) Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25C Operating and Storage Temperature Range Notes: Symbol PD RJA TJ, TSTG Value 300 417 -55 to +150 Unit mW C/W C 1. No purposefully added lead. 2. Diode's Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS31390 Rev. 3 - 2 1 of 4 www.diodes.com DNLS160 (c) Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO Min 80 60 5 250 200 100 150 Typ 320 280 165 80 80 140 140 0.91 0.81 7 270 Max 100 50 100 100 110 140 250 250 1.1 0.9 10 Unit V V V nA A nA nA Test Condition IC = 100A, IE = 0 IC = 10mA, IB = 0 IE = 100A, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150C VCE = 60V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA VCE = 5V, IC = 500mA VCE = 5V, IC = 1A IC = 100mA, IB = 1mA IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA IC = 1A, IB = 50mA VCE = 5V, IC = 1A VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz NEW PRODUCT Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain hFE V Collector-Emitter Saturation Voltage Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: VCE(SAT) RCE(SAT) VBE(SAT) VBE(ON) Cobo fT mV m V V pF MHz 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 0 25 50 100 125 75 TA, AMBIENT TEMPERATURE (C) Fig. 1 Maximum Power Dissipation vs. Ambient Temperature 150 Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage DS31390 Rev. 3 - 2 2 of 4 www.diodes.com DNLS160 (c) Diodes Incorporated NEW PRODUCT Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.001 Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.01 0.1 1 10 Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 120 100 80 60 40 VCE =10V f = 100MHz 20 0 Fig. 7 Typical Capacitance Characteristics Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current DS31390 Rev. 3 - 2 3 of 4 www.diodes.com DNLS160 (c) Diodes Incorporated Ordering Information Device DNLS160-7 Notes: 5. (Note 5) Packaging SOT-23 Shipping 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. NEW PRODUCT Marking Information NK1 = Product Type Marking Code YM = Date Code Marking Y = Year ex: V = 2008 M = Month ex: 9 = September NK1 Date Code Key Year Code Month Code 2008 V Jan 1 Feb 2 2009 W Mar 3 2010 X Apr 4 May 5 YM 2011 Y Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O Nov N 2015 C Dec D Package Outline Dimensions A BC G H K M J D F L SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0 8 All Dimensions in mm Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31390 Rev. 3 - 2 4 of 4 www.diodes.com DNLS160 (c) Diodes Incorporated |
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